Vishay Expands Family of N-Channel TrenchFET Power MOSFETs in Thermally Enhanced PowerPAK SC-75 Package

Vishay Expands Family of N-Channel TrenchFET Power MOSFETs in Thermally Enhanced PowerPAK SC-75 Package

Vishay Expands family of n-channel TrenchFET(R) power MOSFETs join the previously released Siliconix SiB414DK (8-V single n-channel power MOSFET) in the thermally enhanced PowerPAK(R) SC-75 package to offer a VDS range from 8 V to 30 V. The devices released include the industry’s first 30-V device in the 1.6-mm by 1.6-mm footprint area (SiB408DK), and a 20-V MOSFET (SiB412DK) with the industry’s lowest on-resistance. On-resistance for the SiB408DK is as low as 40 mO at 10 V, while the SiB412DK offers an on-resistance down to 34 mO at 4.5 V, which is 21 % lower than the closest competing device. Typical applications for the n-channel PowerPAK SC-75 power MOSFETs will include load, PA, and battery switches in portable electronics. The devices will also save space in 1/8th or 1/16th bricks compared to common 3 mm by 3 mm packages. The SiB408DK will also be used for load switching in notebook computers and netbooks. The devices are halogen-free in accordance with IEC 61249-2-21 and are compliant with RoHS Directive. 2002/95/EC. The MOSFETS are 100 % Rg- and UIS-tested&

N-Channel-TrenchFET-Power-MOSFET

N-Channel TrenchFET Power MOSFETs
(Picture: Vishay)

Press Release:

Vishay Siliconix Extends Family of N-Channel TrenchFET(R) Power MOSFETs in Compact PowerPAK(R) SC-75 Package to Offer 8-V to 30-V VDS Range

New MOSFETs Include Industry’s First 30-V Device and Industry’s Lowest On-Resistance for a 20-V Device in 1.6-mm by 1.6-mm Footprint Area

Vishay Intertechnology, Inc. (NYSE: VSH) expanded its family of n-channel TrenchFET(R) power MOSFETs in the thermally enhanced PowerPAK(R) SC-75 package to offer a VDS range from 8 V to 30 V. The devices released include the industry’s first 30-V device in the 1.6-mm by 1.6-mm footprint area, and a 20-V MOSFET with the industry’s lowest on-resistance.

The new 30-V SiB408DK and 20-V SiB412DK join the previously released Siliconix SiB414DK, the first 8-V single n-channel power MOSFET in the PowerPAK SC-75 footprint area. On-resistance for the SiB408DK is as low as 40 mO at 10 V, while the SiB412DK offers an on-resistance down to 34 mO at 4.5 V, which is 21 % lower than the closest competing device.

The PowerPAK SC-75 package measures 1.6 mm by 1.6 mm by 0.8 mm. This is 36°% smaller than 2-mm by 2-mm devices and 72 % smaller than widely used TSOP-6 devices, while offering similar on-resistance. For designers, the smaller size of the PowerPAK SC-75 saves space and reduces power consumption in portable electronics, allowing for increased functionality while meeting consumer expectations for battery run times.

Typical applications for the n-channel PowerPAK SC-75 power MOSFETs will include load, PA, and battery switches in portable electronics. The devices will also save space in 1/8th or 1/16th bricks compared to common 3 mm by 3 mm packages. The SiB408DK will also be used for load switching in notebook computers and netbooks.

The devices are halogen-free in accordance with IEC 61249-2-21 and are compliant with RoHS Directive. 2002/95/EC. The MOSFETS are 100 % Rg- and UIS-tested.

Device Specification Table

Part number SiB414DK SiB412DK SiB408DK
VDS 8 V 20 V 30 V
VGS ± 5 V ± 8 V ± 20 V
RDS(ON) @ 10 V 40 mO
RDS(ON) @ 4.5 V 26 mO 34 mO 50 mO
RDS(ON) @ 2.5 V 30 mO 40 mO
RDS(ON) @ 1.8 V 37 mO 54 mO
RDS(ON) @ 1.5 V 52 mO
RDS(ON) @ 1.2 V 89 mO

Samples and production quantities of the new n-channel PowerPAK SC-75 power MOSFETs are available now, with lead times of 10 to 12 weeks for larger orders.

<>

About Vishay Intertechnology
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the worlds largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and one-stop shop service have made Vishay a global industry leader.

More information about N-Channel TrenchFET Power MOSFETs can be found at Vishay Website

Responses are currently closed, but you can trackback from your own site.
  • Blogger Post
  • Delicious
  • Facebook
  • Yahoo Bookmarks
  • Technorati Favorites
  • StumbleUpon
  • Yahoo Buzz
  • Digg
  • MySpace
  • Yahoo Mail
  • Windows Live Favorites
  • Yahoo Messenger
  • Windows Live Spaces
  • Google Bookmarks
  • Reddit
  • Twitter
  • HelloTxt
  • LinkedIn
  • Share/Bookmark

Related posts:

  1. New 500-V Vishay Siliconix Power MOSFETs Feature 0.270 W On-Resistance in TO-220, TO-220F, and TO-247 Packages Power MOSFETs feature 0.270 W RDS(on). August 14, 2009 – Model SiHP18N50C with TO-220, SiHF18N50C with TO-220 FULLPAK, and SiHG20N50C with TO-247 packages provide 500 V rating and 0.270 W maximum RDS(on) at 10...
  2. Fairchild Announces FDZ197PZ P Channel MOSFET, Increases Efficiency with 1mm x 1.5mm WL-CSP Package Fairchild Announces FDZ197PZ P Channel MOSFET, Increases Efficiency with 1mm x 1.5mm WL-CSP Package July 31st, 2009, by pur, in Embedded Device, Semiconductor The FDZ197PZ offers an RDS(ON) value of 64mOhm at VGS= -4.5V,...
  3. Vishay Introduces the New PNM Series of Precision Non-Magnetic Thin Film Resistors Embedded System News .Com Embedded Systems and Microcontroller Electronics Daily News for Developers and Decision Makers Home About Sitemap Maxim Introduces MAX4950A, Dual-Channel Buffer and Equalizer to Re-Drive PCIe 1.0 and PCIe 2.0 Signals...
  4. Asymmetric Dual Power MOSFET comes in compact package. Asymmetric Dual Power MOSFET comes in compact package. Asymmetric Dual Power MOSFET comes in compact package. August 21, 2009 – Delivered as co-packaged, asymmetric power MOSFET pair, SiZ700DT [...]...
  5. Toshiba Announces TSON Advance MOSFET with High Power Dissipation in a Thin Compact 3.3mm x 3.3mm x 0.9mm Package Embedded Systems and Microcontroller Electronics Daily News for Developers and Decision Makers Amalfi Semiconductor Announces AM7802, the Worlds Smallest, Highest Performing CMOS-Based Transmit Module for Front-End Cellular Handsets Arasan Chip Systems Releases MIPI(R) High Speed...

Tags: , , , , , , , , , , ,

Comments are closed.

Search engine optimization by SEO Design Solutions

UA-2539665-2